Rochester Electronics Memory UPD44325094BF5-E33-FQ1-A

Description
QDR SRAM, 4MX9, 0.45NS
  • Memory - UPD44325094BF5-E33-FQ1-A - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
QDR SRAM, 4MX9, 0.45NS
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - UPD44325094BF5-E33-FQ1-A - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
UPD44325094BF5-E33-FQ1-A
Memory UPD44325094BF5-E33-FQ1-A
QDR SRAM, 4MX9, 0.45NS

QDR SRAM, 4MX9, 0.45NS

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number UPD44325094BF5-E33-FQ1-A
Product Name Memory
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 24C01 - Lingto Electronic Limited
Rochester Electronics
Memory
24C01
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 1 kbits
View Details
Memory - 9023538AA - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
9023538AA
View Details
Controllers - DP8429VX-70 - Quarktwin Technology Ltd.
Texas Instruments
Controllers
DP8429VX-70
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 68-LCC (J-Lead)
Supply Voltage 4.5V ~ 5.5V
View Details
Memory - SMJ27C010A - Micross Components, Inc.
Micross Components, Inc.
Memory
SMJ27C010A
Specs
Memory Category EPROM; UVEPROM
Access Time 41263 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details