Rochester Electronics Memory UPD44325092BF5-E40-FQ1

Description
QDR SRAM, 4MX9, 0.45NS
  • Memory - UPD44325092BF5-E40-FQ1 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
QDR SRAM, 4MX9, 0.45NS
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - UPD44325092BF5-E40-FQ1 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
UPD44325092BF5-E40-FQ1
Memory UPD44325092BF5-E40-FQ1
QDR SRAM, 4MX9, 0.45NS

QDR SRAM, 4MX9, 0.45NS

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number UPD44325092BF5-E40-FQ1
Product Name Memory
Unlock Full Specs
to access all available technical data

Similar Products

Infineon Technologies AG
Memory IC and Storage Component
ADM6992X-AD-T-1
Specs
Operating Temperature 0 to 115 C (32 to 239 F)
Package Type QFP; Tray
Supply Voltage 3.135V ~ 3.465V
View Details
Memory - 27S21AJC - Quarktwin Technology Ltd.
Rochester Electronics
Memory
27S21AJC
View Details
3 suppliers
Memory - AS8ERLC128K32 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8ERLC128K32
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory IC and Storage Component - 774-NS32202D10 - ERSAELECTRONICS PTE. LTD.
Texas Instruments
Memory IC and Storage Component
NS32202D10
View Details
2 suppliers