Rochester Electronics Memory UPD44165182BF5-E40-EQ3

Description
QDR SRAM, 1MX18, 0.45NS
  • Memory - UPD44165182BF5-E40-EQ3 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
QDR SRAM, 1MX18, 0.45NS
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - UPD44165182BF5-E40-EQ3 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
UPD44165182BF5-E40-EQ3
Memory UPD44165182BF5-E40-EQ3
QDR SRAM, 1MX18, 0.45NS

QDR SRAM, 1MX18, 0.45NS

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number UPD44165182BF5-E40-EQ3
Product Name Memory
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8ER128K32 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8ER128K32
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
SM28VLT32-HT 32-Mbit High-Temp Flash Memory with Serial Peripheral Interface (SPI) Bus - SM28VLT32SHKN - Texas Instruments
Texas Instruments
SM28VLT32-HT 32-Mbit High-Temp Flash Memory with Serial Peripheral Interface (SPI) Bus
SM28VLT32SHKN
Specs
Memory Category Flash
Operating Temperature -55 to 210 C (-67 to 410 F)
Density 32000 kbits
View Details
3 suppliers
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F1120101VXA - 5962F1120101VXA - Infineon Technologies AG
Infineon Technologies AG
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F1120101VXA
5962F1120101VXA
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 72000 kbits
Number of Words 2 k
View Details
Flash Memory - 1882635P - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882635P
Specs
Memory Category Flash
Package Type TSOP
Pins 48
View Details