Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - SSW4N60BTM SSW4N60BTM

The SSW4N60BTM is a 600V N-channel MOSFET designed for high-efficiency switch mode power supplies, featuring a drain-source on-state resistance of 2.5Ω at 10V gate-source voltage and a continuous drain current of 4.0A at 25°C case temperature. It is packaged in a TO-263 (D2PAK) case with two leads and is 100% avalanche tested, with a single pulsed avalanche energy rating of 240mJ. The device has a typical gate charge of 22nC and a reverse transfer capacitance of 14pF, and meets the requirement for improved dv/dt capability with a peak diode recovery dv/dt of 5.5V/ns. Its operating and storage junction temperature range is -55°C to +150°C. Thermal resistance from junction to case is 1.25°C/W.