Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - SSU2N60BTU SSU2N60BTU

The SSU2N60BTU is a 600V N-channel MOSFET in an I-PAK (TO-251) package, designed for high-efficiency switch mode power supplies. It has a continuous drain current of 1.8A at 25°C case temperature and an on-state resistance of 5.0Ω at VGS = 10V. The device features a typical gate charge of 12.5nC, reverse transfer capacitance of 7.6pF, and is 100% avalanche tested with a single pulsed avalanche energy rating of 120mJ. Thermal resistance from junction to case is 2.87°C/W, and it operates across a temperature range of -55°C to +150°C. The package dimensions are specified in millimeters with lead spacing and body size defined for through-hole mounting.