Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - SFU9220TU SFU9220TU

The SFU9220TU is a P-channel power MOSFET in a TO-251 (I-PAK) package, designed for switching applications requiring a -200 V drain-source breakdown voltage and continuous drain current of -3.1 A at 25°C. It features avalanche ruggedness with a single pulsed avalanche energy rating of 256 mJ and a typical on-state resistance of 1.111 Ω at -10 V gate-source voltage. The device operates over a junction temperature range of -55°C to +150°C and meets the AEC-Q200 automotive qualification standard. Thermal resistance from junction to case is 4.17°C/W, and it supports a total power dissipation of 30 W at 25°C case temperature. The gate threshold voltage ranges from -2.0 V to -4.0 V, and the gate charge is specified at 15-19 nC under standard test conditions. The part is RoHS compliant and uses a 3-lead I-PAK package with a footprint compatible with standard PCB layouts.