Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - SFU9024TU SFU9024TU

The SFU9024TU is a P-channel power MOSFET designed for switching applications requiring high avalanche ruggedness and low on-resistance. It is packaged in a D-PAK or I-PAK case with a maximum drain-to-source voltage of -60 V and a continuous drain current of -7.8 A at 25°C. The device features a typical drain-source on-resistance of 0.206 Ω and a gate-source voltage rating of ±30 V. It supports a single-pulsed avalanche energy of 155 mJ and operates within a junction temperature range of -55°C to +150°C. Thermal resistance from junction to case is 3.91 °C/W, and junction-to-ambient is 50 °C/W when mounted on the minimum recommended PCB pad size.