Rochester Electronics Memory S29GL128P10FFI010

Description
FLASH, 128MX1, 100NS, PBGA64
  • Memory - S29GL128P10FFI010 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
FLASH, 128MX1, 100NS, PBGA64
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S29GL128P10FFI010 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
S29GL128P10FFI010
Memory S29GL128P10FFI010
FLASH, 128MX1, 100NS, PBGA64

FLASH, 128MX1, 100NS, PBGA64

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number S29GL128P10FFI010
Product Name Memory
Memory Category Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 774-NM29F030V - ERSAELECTRONICS PTE. LTD.
Texas Instruments
Memory IC and Storage Component
NM29F030V
View Details
2 suppliers
Flash Memory - 1882517 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882517
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - AS4C1259 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS4C1259
Specs
Memory Category DRAM; DRAM Chip
Access Time 100 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F1120101VXA - 5962F1120101VXA - Infineon Technologies AG
Infineon Technologies AG
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F1120101VXA
5962F1120101VXA
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 72000 kbits
Number of Words 2 k
View Details