Rochester Electronics Memory S26KS128SDABHV030

Description
IC FLASH 128MBIT PARALLEL 24FBGA
  • Memory - S26KS128SDABHV030 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
IC FLASH 128MBIT PARALLEL 24FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S26KS128SDABHV030 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
S26KS128SDABHV030
Memory S26KS128SDABHV030
IC FLASH 128MBIT PARALLEL 24FBGA

IC FLASH 128MBIT PARALLEL 24FBGA

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number S26KS128SDABHV030
Product Name Memory
Memory Category Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYX4DD3K128M64PBG2 - Micross Components, Inc.
Micross Components, Inc.
Memory
MYX4DD3K128M64PBG2
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 1024000 kbits
View Details
Memory - 71024S12YGI - Lingto Electronic Limited
Rochester Electronics
Memory
71024S12YGI
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details
Memory - NMC27C32BQE-200 - 258515-NMC27C32BQE-200 - Win Source Electronics
Texas Instruments
Memory - NMC27C32BQE-200
NMC27C32BQE-200
View Details
2 suppliers
Quad 108 MHz SOIC Memory IC and Storage Component - 2020-S25FL116K0XMFI011 - ERSAELECTRONICS PTE. LTD.
Infineon Technologies AG
Quad 108 MHz SOIC Memory IC and Storage Component
S25FL116K0XMFI011
Specs
Memory Category Flash; Non-Volatile
Cycle Time 3.00E6 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details