Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - RF1S50N06SM9A RF1S50N06SM9A

The RF1S50N06SM9A is an N-channel power MOSFET in a TO-263AB package, designed for switching applications such as regulators, motor drivers, and relay drivers. It has a continuous drain current rating of 50 A and a drain-to-source voltage rating of 60 V, with a maximum on-resistance of 0.022 Ω at 10 V gate drive. The device operates at junction temperatures up to 175 °C and features a thermal resistance from junction to case of 1.14 °C/W. The TO-263AB package is surface-mount and has a drain terminal connected to the mounting flange. The part number includes a trailing tape-and-reel ordering code, but the base device is specified in the series as RF1S50N06SM and shares all key ratings and performance characteristics.