Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP6N60 NTP6N60

The NTP6N60 is an N-channel power MOSFET designed for high-voltage, high-speed switching in power supplies, motor controls, and bridge circuits. It is packaged in a TO-220AB case with dimensions of 15.75 mm maximum length, 10.28 mm maximum width, and 6.47 mm maximum height. The device has a drain-source voltage rating of 600 V, a continuous drain current of 6.0 A at 100°C, and a maximum power dissipation of 142 W. Its typical on-resistance is 850 mΩ at 10 V gate drive, and it features a specified avalanche energy of 450 mJ. The thermal resistance from junction to case is 0.88°C/W and junction to ambient is 50°C/W when surface-mounted. The part meets RoHS compliance and is marked with an ON Semiconductor device code. It is rated for operating and storage temperatures from -55°C to 150°C.