Rochester Electronics TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2211LT1 MMUN2211LT1

The MMUN2211LT1 is an NPN silicon surface mount transistor with an integrated monolithic bias resistor network, replacing a discrete transistor and external resistors. It is housed in the SOT-23 package, measuring 2.90 mm × 1.30 mm × 1.00 mm. The device has a maximum collector-emitter voltage of 50 V and a collector current rating of 100 mA. Total device dissipation is 246 mW, with a junction-to-ambient thermal resistance of 508 °C/W. The input resistor R1 ranges from 7.0 to 13 kΩ, with a resistance ratio R1/R2 of 0.8 to 1.2. DC current gain (hFE) is 35 to 60 at IC = 5.0 mA and VCE = 10 V. Collector-emitter saturation voltage is ≤0.25 V at IC = 10 mA. It operates over a junction temperature range of -55 to +150 °C.