The MJE700 is a PNP silicon Darlington power transistor designed for general-purpose amplifier and low-speed switching applications. It is packaged in a TO-225 case with dimensions of 10.80 to 11.04 mm in length, 7.50 to 7.74 mm in width, and 14.61 to 16.63 mm in height. The device has a collector-emitter voltage rating of 60 V, a continuous collector current of 4.0 A, and a total power dissipation of 40 W at 25°C, derating at 0.32 mW/°C above this temperature. Junction-to-case thermal resistance is 6.25°C/W. It features a typical DC current gain (hFE) of 2000 at 2.0 A and a collector-emitter saturation voltage of up to 2.5 V at 1.5 A collector current. The transistor includes built-in base-emitter resistors and operates within a junction temperature range of -55°C to +150°C. It is available in a Pb-free version designated MJE700G. The device meets ROHS standards and is rated for through-hole mounting.
Manufacturer: ON Semiconductor
Win Source Part Number: 884913-MJE700
Features: Bipolar (BJT) Transistor PNP - Darlington 60 V 4 A - 40 W Through Hole TO-126
Package: Bulk
Package: TO-225AA, TO-126-3
Mounting: Through Hole
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: TO-126
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Quantity per package: 500
HTSUS: 8541.29.0095
| Win Source Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | 884913-MJE700 |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - MJE700 |
| Polarity | PNP |
