Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - MJD210T4 MJD210T4

MJD210T4 is a PNP silicon power transistor for surface mount applications, part of the MJD210 series. It is packaged in a DPAK (TO-252-3, SC-63) case with dimensions compliant with ASME Y14.5M standards and a thermal pad. The device has a collector-emitter voltage rating of 25 Vdc, continuous collector current of 5 A, and maximum power dissipation of 1.4 W at 25°C ambient. Current gain (hFE) is a minimum of 10 at 5 A collector current and 45 at 2 A. Collector-emitter saturation voltage is 0.75 V maximum at 2 A collector current and 1.8 V maximum at 5 A. The transition frequency is 65 MHz minimum at 100 mA collector current. The device meets UL 94 V-0 flammability requirements and is Pb-free, with AEC-Q101 qualification and PPAP capability for automotive applications.