Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - MJD200T4 MJD200T4

The MJD200T4 is an NPN silicon power transistor in a DPAK surface-mount package, designed for low-voltage, low-power audio amplifier applications. It has a collector-emitter voltage rating of 25 Vdc, continuous collector current of 5.0 A, and total power dissipation of 1.4 W at 25°C ambient temperature. The device features a minimum DC current gain of 70 at 500 mA collector current and a current-gain-bandwidth product of 65 MHz. Collector-emitter saturation voltage is 0.75 V maximum at 2 A collector current. Thermal resistance junction-to-ambient is 89.3 °C/W when surface mounted on recommended pad sizes. The epoxy meets UL 94 V-0 flammability rating. It is available in a Pb-free version and is packaged in tape and reel at 2500 units per reel.