Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - MJ14002 MJ14002

Description
Manufacturer: ON Semiconductor Win Source Part Number: 884877-MJ14002 Features: Bipolar (BJT) Transistor NPN 80 V 60 A - 300 W Through Hole TO-204 (TO-3) Package: Tray Package: TO-204AE Mounting: Through Hole Part Status: Obsolete Categories: Discrete Semiconductor Products Case / Package: TO-204 (TO-3) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Quantity per package: 100 HTSUS: 8541.29.0095
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 884877-MJ14002 Features: Bipolar (BJT) Transistor NPN 80 V 60 A - 300 W Through Hole TO-204 (TO-3) Package: Tray Package: TO-204AE Mounting: Through Hole Part Status: Obsolete Categories: Discrete Semiconductor Products Case / Package: TO-204 (TO-3) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Quantity per package: 100 HTSUS: 8541.29.0095
Request a Quote
Datasheet
Datasheet Summary
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The MJ14002 is an NPN silicon power transistor designed for high-power amplifier and switching applications. It is packaged in a TO-204 (TO-3) case with a through-hole mounting style. The device has a collector-emitter voltage rating of 80 Vdc, a continuous collector current of 60 A, and a maximum power dissipation of 300 W at 25°C case temperature. The DC current gain (hFE) ranges from 15 to 100 at a collector current of 50 A. The collector-emitter saturation voltage is 2.5 V maximum at 50 A collector current. Thermal resistance from junction to case is 0.584 °C/W. The operating and storage junction temperature range is -65°C to +200°C. The part is available in a Pb-free package variant. It meets RoHS compliance.

Datasheet Summary
Powered by GS/AI

The MJ14002 is an NPN silicon power transistor designed for high-power amplifier and switching applications. It is packaged in a TO-204 (TO-3) case with a through-hole mounting style. The device has a collector-emitter voltage rating of 80 Vdc, a continuous collector current of 60 A, and a maximum power dissipation of 300 W at 25°C case temperature. The DC current gain (hFE) ranges from 15 to 100 at a collector current of 50 A. The collector-emitter saturation voltage is 2.5 V maximum at 50 A collector current. Thermal resistance from junction to case is 0.584 °C/W. The operating and storage junction temperature range is -65°C to +200°C. The part is available in a Pb-free package variant. It meets RoHS compliance.

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TRANSISTORS - Transistors (BJT) - Single - MJ14002 - 884877-MJ14002 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJ14002
884877-MJ14002
TRANSISTORS - Transistors (BJT) - Single - MJ14002 884877-MJ14002
Manufacturer: ON Semiconductor Win Source Part Number: 884877-MJ14002 Features: Bipolar (BJT) Transistor NPN 80 V 60 A - 300 W Through Hole TO-204 (TO-3) Package: Tray Package: TO-204AE Mounting: Through Hole Part Status: Obsolete Categories: Discrete Semiconductor Products Case / Package: TO-204 (TO-3) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Quantity per package: 100 HTSUS: 8541.29.0095

Manufacturer: ON Semiconductor
Win Source Part Number: 884877-MJ14002
Features: Bipolar (BJT) Transistor NPN 80 V 60 A - 300 W Through Hole TO-204 (TO-3)
Package: Tray
Package: TO-204AE
Mounting: Through Hole
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: TO-204 (TO-3)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Quantity per package: 100
HTSUS: 8541.29.0095

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 884877-MJ14002
Product Name TRANSISTORS - Transistors (BJT) - Single - MJ14002
Polarity NPN
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