Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - KSP27TA KSP27TA

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 876454-KSP27TA Features: Bipolar (BJT) Transistor 60 V 500 mA 625 mW Package: Bulk Part Status: Obsolete Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 81 pct. Supply and Demand Status: Limited Quantity per package: 2000 HTSUS: 8541.21.0095
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 876454-KSP27TA Features: Bipolar (BJT) Transistor 60 V 500 mA 625 mW Package: Bulk Part Status: Obsolete Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 81 pct. Supply and Demand Status: Limited Quantity per package: 2000 HTSUS: 8541.21.0095
Request a Quote
Datasheet
Datasheet Summary
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The KSP27 is an NPN epixtal silicon Darlington transistor in a TO-92 package, designed for general-purpose switching applications. It has a collector-emitter voltage rating of 60 V, a maximum collector current of 500 mA, and a collector power dissipation of 625 mW. The junction temperature rating is 150 °C, with a collector-emitter saturation voltage of 1.5 V at a collector current of 100 mA and a base current of 0.1 mA. The package dimensions are 4.58 mm in height and 2.69 mm in width, with a lead spacing of 1.27 mm. The device features a minimum DC current gain of 10,000 at 10 mA collector current and 5 V collector-emitter voltage.

Datasheet Summary
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The KSP27 is an NPN epixtal silicon Darlington transistor in a TO-92 package, designed for general-purpose switching applications. It has a collector-emitter voltage rating of 60 V, a maximum collector current of 500 mA, and a collector power dissipation of 625 mW. The junction temperature rating is 150 °C, with a collector-emitter saturation voltage of 1.5 V at a collector current of 100 mA and a base current of 0.1 mA. The package dimensions are 4.58 mm in height and 2.69 mm in width, with a lead spacing of 1.27 mm. The device features a minimum DC current gain of 10,000 at 10 mA collector current and 5 V collector-emitter voltage.

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TRANSISTORS - Transistors (BJT) - Single - KSP27TA - 876454-KSP27TA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSP27TA
876454-KSP27TA
TRANSISTORS - Transistors (BJT) - Single - KSP27TA 876454-KSP27TA
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 876454-KSP27TA Features: Bipolar (BJT) Transistor 60 V 500 mA 625 mW Package: Bulk Part Status: Obsolete Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 81 pct. Supply and Demand Status: Limited Quantity per package: 2000 HTSUS: 8541.21.0095

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 876454-KSP27TA
Features: Bipolar (BJT) Transistor 60 V 500 mA 625 mW
Package: Bulk
Part Status: Obsolete
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 81 pct.
Supply and Demand Status: Limited
Quantity per package: 2000
HTSUS: 8541.21.0095

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 876454-KSP27TA
Product Name TRANSISTORS - Transistors (BJT) - Single - KSP27TA
Package Type SOT3
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