Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - KSA1406CSTU KSA1406CSTU

The KSA1406CSTU is a PNP epitaxial silicon transistor for CRT display and video output applications, housed in a TO-126 package. It has a collector-base breakdown voltage of -200 V, a continuous collector current rating of -100 mA, and a collector dissipation of 1.2 W at 25°C. The device features a typical current gain bandwidth product of 400 MHz and a reverse transfer capacitance of 1.7 pF at -30 V and 1 MHz. The collector-emitter saturation voltage is -0.8 V at -30 mA collector current and -3 mA base current, with an hFE DC current gain range of 40 to 120 depending on binning. The junction temperature rating is 150°C.