Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R190E6 IPW65R190E6

The IPW65R190E6 is a 650V CoolMOS™ E6 power MOSFET designed for high-efficiency switched-mode power supplies, featuring extremely low switching and conduction losses. It is packaged in a PG-TO247 case with a drain-source on-state resistance of 0.19 Ω maximum at 25°C and a pulsed drain current of 66 A. The device has a gate charge of 73 nC and supports a maximum junction temperature of 150°C. It meets JEDEC J-STD-20 and JESD22 qualifications, is Pb-free, and halogen-free.