Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R190C6 IPW65R190C6

The IPW65R190C6 is a 650V CoolMOS™ C6 power MOSFET in a PG-TO247 package, designed for high-efficiency switching applications such as PFC, PWM, and resonant converters. It features a maximum drain-source on-resistance of 0.19 Ω, a gate charge of 73 nC, and a pulsed drain current of 66 A. The device supports a maximum junction temperature of 150 °C and has a thermal resistance from junction to case of 0.83 °C/W. It meets JEDEC J-STD-20 and JESD22 qualifications, is Pb-free, and halogen-free. The package has three pins with a mounting torque rating of 60 Ncm for M3 and M3.5 screws.