Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPU60R1K0CE IPU60R1K0CE

The IPU60R1K0CE is a 600V CoolMOSâ„¢ CE power transistor in a PG-TO-251 package, designed for cost-sensitive consumer and lighting applications requiring high efficiency and easy drive characteristics. It features a maximum drain-source on-resistance of 1000 mΩ, a continuous drain current of 6.8 A at T₌=25°C, and a pulsed drain current of 12 A. The device has a gate charge total of 13 nC and an energy storage in output capacitance of 1.3 μJ at 400 V. Thermal resistance from junction to case is 2.06 °C/W, and junction temperature operates from -40°C to 150°C. The part is qualified for standard grade applications and features Pb-free plating and a halogen-free mold compound.