Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP80N04S2-H4 IPP80N04S2-H4

The IPP80N04S2-H4 is an N-channel MOSFET in a PG-TO220-3-1 package, designed for high-current switching applications. It has a continuous drain current of 80 A and a maximum drain-source voltage of 40 V, with an on-state resistance of up to 3.7 mΩ in the SMD version, specified at 10 V gate drive. The device is rated for operation up to 175°C and is AEC-Q101 qualified for automotive applications. It has been 100% avalanche tested and meets RoHS compliance. The thermal resistance from junction to case is 0.5 K/W.