Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP60R600P7 IPP60R600P7

The IPP60R600P7 is a 600V CoolMOS™ P7 power MOSFET designed for high-efficiency switching applications such as PFC, LLC, and PWM stages. It is packaged in a PG-TO-220-3 case with a maximum drain-source breakdown voltage of 650 V and a drain-source on-resistance rating of 600 mΩ at 25°C. The device supports a pulsed drain current of 16 A and features an avalanche energy rating of 17 mJ for single pulses. It exhibits excellent ESD robustness exceeding 2 kV (HBM) and is fully qualified per JEDEC for industrial applications. Thermal resistance from junction to case is 4.19 °C/W, and junction temperature operates from -55°C to 150°C.