Rochester Electronics Specialized ICs - IPP60R060P7 IPP60R060P7

The IPP60R060P7 is a 600V CoolMOS™ P7 power MOSFET designed for high-efficiency switching applications such as PFC, LLC, and PWM stages. It is packaged in a PG-TO-220-3 case with a drain-source on-state resistance of 60 mΩ max at 25°C and a pulsed drain current rating of 151 A. The device features low switching and conduction losses, excellent ESD robustness exceeding 2 kV (HBM), and a body diode with a maximum commutation speed of 900 A/µs. Thermal resistance from junction to case is 0.76 °C/W. It meets JEDEC J-STD-20 and JESD22 standards for industrial and consumer applications.