Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPN60R2K1CE IPN60R2K1CE

The IPN60R2K1CE is a 600V CoolMOS™ CE power MOSFET designed for cost-sensitive consumer and lighting applications, featuring extremely low losses and high commutation ruggedness. It is packaged in a PG-SOT223 case with dimensions of 6.30 to 6.70 mm in length, 6.70 to 7.30 mm in width, and 2.3 mm between pins. The device has a maximum drain-source on-state resistance of 2.1 Ω, a pulsed drain current of 5.9 A, and a gate charge of 6.7 nC. It is qualified for standard grade applications, meets RoHS standards, and features a Pb-free plating with halogen-free mold compound. The junction temperature range is from -40°C to 150°C, with a maximum power dissipation of 5.0 W at 25°C case temperature.