Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI034NE7N3G IPI034NE7N3G

The IPI034NE7N3G is an N-channel MOSFET designed for high-frequency switching applications. It is packaged in a Through Hole package measuring 10.5 mm × 9.5 mm with a vertical mounting style for the drain connection. The device has a drain-source breakdown voltage of 75 V, a continuous drain current of 34 A at 25 °C, and a gate-source threshold voltage between 2 V and 4 V. It features a very low on-resistance of 29 mΩ at VGS = 10 V and ID = 17 A. The MOSFET is qualified per the IEC 60747-14 standard and is halogen-free. Operating and storage temperatures range from -55 °C to 150 °C.