The IPB80N04S3-06 is an N-channel enhancement mode MOSFET designed for automotive applications, rated for 40 V drain-source voltage and 80 A continuous drain current. It features a PG-TO263-3-2 surface mount package and an operating junction temperature range of -55°C to 175°C. The device has a maximum on-state resistance of 5.4 mΩ at 80 A and 10 V gate-source voltage, and is AEC-Q101 qualified. It is RoHS compliant, has 100% avalanche testing, and supports MSL1 reflow processes up to 260°C.
Manufacturer: Infineon Technologies
Win Source Part Number: 874749-IPB80N04S306A
Series: OptiMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 40 V 80A (Tc) 100W (Tc) Surface Mount PG-TO263-3-2
Package: Bulk
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: Surface Mount
Family Name: IPB80N04
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-3-2
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
| Win Source Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | 874749-IPB80N04S306ATMA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N04S306ATMA1 |
| Polarity | N-Channel |
