Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB45N04S4L-08 IPB45N04S4L-08

The IPB45N04S4L-08 is an N-channel enhancement mode MOSFET for switching applications, packaged in a PG-TO263-3-2 case. It has a maximum drain-source voltage of 40 V, a continuous drain current of 45 A at 25°C, and a maximum on-state resistance of 7.6 mΩ at 10 V gate-source voltage. The device operates at up to 175°C junction temperature, is AEC-Q200 qualified, and meets RoHS standards. It is 100% avalanche tested with a single-pulse avalanche energy rating of 55 mJ and an avalanche current of 45 A.