Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB021N06N3G IPB021N06N3G

The IPB021N06N3G is an N-channel MOSFET designed for power conversion applications. It is packaged in a PG-TO220-3 case with dimensions consistent with standard TO-220 form factor. The device has a drain-source breakdown voltage of 60 V, a maximum continuous drain current of 90 A, and a drain-source on-resistance of 2.1 mΩ at 25°C and 90 A. Maximum power dissipation is 300 W at 25°C case temperature. The gate threshold voltage ranges from 1.2 V to 2.5 V. The product meets AEC-Q101 qualification standards and is RoHS compliant. Thermal resistance from junction to case is 0.5 K/W. The operating junction temperature range is -55°C to 175°C.