Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76145S3ST HUF76145S3ST

The HUF76145S3ST is a 75A, 30V N-channel MOSFET in a TO-263AB package with a drain-source on-resistance of 0.0045 Ω at VGS = 10V. It supports continuous drain current of 75A at 25°C case temperature and has a power dissipation rating of 270W. Thermal resistance from junction to case is 0.46°C/W and junction-to-ambient is 62°C/W. Switching performance includes a turn-on time of 110ns at VGS = 10V. The device features logic-level gate drive, a parasitic body diode with reverse recovery time of 115ns, and avalanche energy capability. The operating junction temperature range is -40°C to 150°C.