The HSC285 is a silicon Schottky barrier diode designed for detector applications, featuring low forward voltage and low capacitance for high detection sensitivity. It is housed in an ultra-small flat lead package (UFP) with a size of PWFS0002ZA-A. The diode has a maximum reverse voltage of 2 V, an average rectified current of 5 mA, and a junction temperature limit of 125°C. Forward voltage is ≤0.27 V at 1 mA and ≤0.15 V at 0.1 mA. Capacitance is 0.3 pF at 0.5 V and 1 MHz. ESD capability is rated at 10 V (C=200 pF, R=0 Ω). The storage temperature range is -55°C to +125°C. The part is classified as 'Standard' quality grade.
Manufacturer: Renesas Electronics America
Win Source Part Number: 873905-HSC285TRF-E
Series: *
Features: RF Diode
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 4000
MSL Level: 1 (Unlimited)
REACH Status: Vendor Undefined
HTSUS: 8541.10.0070
| Win Source Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | 873905-HSC285TRF-E |
| Product Name | RFFETs - HSC285TRF-E |
| Package Type | SOT3 |
