Rochester Electronics Memory HN58V66AT10E

The HN58V66AT10E is a 64k EEPROM organized as 8192 words vó 8 bits, designed for high-speed and low-power applications. It operates with a single supply voltage ranging from 2.7 to 5.5 V, featuring an access time of 100 ns at lower voltages and 70 ns at higher voltages. The device supports automatic byte and page write functions, with maximum write times of 10 ms for both operations. This EEPROM includes on-chip latches for address, data, chip enable (CE), output enable (OE), and write enable (WE), enhancing its operational efficiency. It is equipped with a Ready/Busy function, data polling, and a toggle bit for status monitoring. The product is rated for 10^5 erase/write cycles in page mode and offers a data retention period of up to 10 years. The HN58V66AT10E is suitable for a wide operating temperature range of -40 to +85°C and includes a data protection circuit for power on/off scenarios. Additionally, it conforms to JEDEC byte-wide standards and is available in lead-free options. This combination of features makes it a reliable choice for various electronic applications.