Rochester Electronics Memory HN58V66AFPI10E

Description
HN58V66 - PARALLEL 64KBIT EEPROM
Datasheet
Description
HN58V66 - PARALLEL 64KBIT EEPROM
Datasheet

Suppliers

Company
Product
Description
Supplier Links
HN58V66 - PARALLEL 64KBIT EEPROM

HN58V66 - PARALLEL 64KBIT EEPROM

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number HN58V66AFPI10E
Product Name Memory
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 24C04/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 4 kbits
View Details
SDRAM - 1882676P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 4096000 kbits
View Details
Memory - AS8ER128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 00002444259 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details