Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT1035R-EL-E HAT1035R-EL-E

The HAT1035R-EL-E is a silicon P-channel power MOSFET designed for high-speed power switching in standard applications. It is packaged in an SOP-8<FP-8DAV> case, measuring 4.90 mm by 3.95 mm, with a typical mass of 0.085 g. The device features a drain-to-source voltage rating of -150 V, a gate-to-source voltage rating of ±15 V, and a continuous drain current of -0.25 A. It has a typical on-resistance of 5.0 Ω at -10 V gate drive and 6.2 Ω at -4 V gate drive. The MOSFET meets the Standard quality grade classification per Renesas Electronics and is supplied in tape packaging.