Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - H7N0308CF-E H7N0308CF-E

The H7N0308CF-E is a silicon N-channel MOSFET designed for high-speed power switching, packaged in a TO-220CFM case with dimensions of 10.0±0.3 mm length, 3.2±0.2 mm width, and 1.9 g mass. It has a drain-to-source voltage rating of 30 V, continuous drain current of 60 A, and a typical on-resistance of 3.8 mΩ at 10 V gate drive. The device supports gate drive from a 5 V source and meets RoHS requirements. Thermal impedance is 4.17 °C/W from channel to case and 62.5 °C/W from channel to ambient, with a maximum channel temperature of 150 °C. The part is classified as 'Standard' quality for general commercial applications.