Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - H5N5005PL-E H5N5005PL-E

The H5N5005PL-E is a silicon N-channel MOSFET designed for high-speed power switching, housed in a TO-3PL package measuring 20.0 mm × 5.0 mm with a mass of 9.9 g. It features a drain-to-source voltage rating of 500 V, a continuous drain current of 60 A, and a typical on-resistance of 0.070 Ω at 30 A and 10 V gate-source voltage. The device includes a built-in fast recovery diode with a reverse recovery time of 220 ns and is rated for avalanche current up to 30 A. It meets RoHS standards and is classified as a 'Standard' quality grade product. The part is supplied in a tube pack of 250 units.