Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - FW356-TL-E FW356-TL-E

The FW356 is a single-package dual MOSFET integrating an N-channel and P-channel silicon device for general-purpose switching applications such as motor drives and inverters. It is housed in an SOP8 package measuring 5.0 mm by 6.2 mm with a height of 1.7 mm. Both transistors feature a drain-to-source voltage rating of 60 V, with DC drain currents of 5 A (N-channel) and 3.5 A (P-channel), and pulse currents up to 14 A. The N-channel exhibits a maximum ON-resistance of 84 mΩ at 4 V gate drive, while the P-channel reaches 210 mΩ under the same condition. Both devices support gate-to-source voltages up to ±20 V, operate with a channel temperature limit of 150 °C, and meet RoHS compliance. Total power dissipation is rated at 2.3 W when mounted on a 1200 mm² × 0.8 mm ceramic board.