Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD5N50TF FDD5N50TF

The FDD5N50TF is an N-channel UniFET II MOSFET in a D-PAK package, designed for high-voltage switching applications such as power factor correction and LED lighting. It has a drain-to-source voltage rating of 500 V, a continuous drain current of 4 A at 25°C, and a maximum on-state resistance of 1.4 Ω at 10 V gate bias. The device features a typical gate charge of 11 nC and is avalanche-rated for 256 mJ single-pulse energy. It meets RoHS compliance and operates within a junction temperature range of -55°C to +150°C. The package dimensions are consistent with the D-PAK form factor, and the part is supplied on a 380 mm reel with 16 mm tape width for a quantity of 2000 per reel.