Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB0260N1007L FDB0260N1007L

The FDB0260N1007L is a 100 V N-channel PowerTrench MOSFET designed for industrial motor drive, power supply, and battery protection applications. It is packaged in a D2-PAK-7L (TO-263-7) surface mount case with dimensions conforming to JEDEC TO-263 standards. The device has a maximum continuous drain current of 200 A at 25°C and 140 A at 100°C, with a maximum on-state resistance of 2.6 mΩ at 10 V gate voltage and 27 A drain current. It supports a peak pulsed drain current of 1100 A and has a single pulse avalanche energy rating of 912 mJ. Thermal resistance from junction to case is 0.6 °C/W, and operating junction and storage temperature range is -55 °C to +175 °C. The part is RoHS compliant.