Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH125N60E FCH125N60E

The FCH125N60E is an N-channel SuperFET II Easy-Drive MOSFET designed for high-voltage switching applications such as telecom and industrial power supplies. It is packaged in a TO-247-3 case with a maximum drain-to-source voltage of 600 V, a continuous drain current of 29 A at 25°C, and a maximum on-resistance of 125 mΩ at 10 V gate drive. The device has a typical gate charge of 75 nC and an effective output capacitance of 258 pF, which supports controlled switching to reduce EMI. It is rated for operation between -55°C and 150°C junction temperature, with a maximum thermal resistance from junction to case of 0.45°C/W. The FCH125N60E is RoHS compliant and has been 100% avalanche tested. Its Easy-Drive variant features slightly slower switching compared to standard SuperFET II MOSFETs to simplify EMI management.