The FCH067N65S3 is an N-channel SuperFET III MOSFET designed for high-efficiency power conversion in telecom, industrial, and UPS/solar applications. It features a 650 V drain-to-source voltage rating, a continuous drain current of 44 A at 25°C, and a maximum on-resistance of 67 mΩ at 10 V gate drive. The device is packaged in a TO-247-3 case with long leads, measured as a molded three-lead JEDEC AB configuration. It has a maximum junction-to-case thermal resistance of 0.4 °C/W and operates from -55 °C to 150 °C. The MOSFET is RoHS compliant and 100% avalanche tested, with a single pulse avalanche energy rating of 1160 mJ. Gate charge is specified at 78 nC typical, and the effective output capacitance is 715 pF.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 918960-FCH067N65S3-F
Series: SuperFET® III
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 650 V 44A (Tc) 312W (Tc) Through Hole TO-247-3
Package: Bulk
Package: TO-247-3
Mounting: Through Hole
Categories: Discrete Semiconductor Products
Case / Package: TO-247-3
Popularity: High
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Balance
Quantity per package: 1
| Win Source Electronics | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 918960-FCH067N65S3-F155 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH067N65S3-F155 |
| Polarity | N-Channel |
