Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - DTC114TE DTC114TE

The DTC114TE is an NPN silicon surface mount transistor with a monolithic bias resistor network, designed to simplify circuit design and reduce board space by integrating a series base resistor and base-emitter resistor into a single device. It is housed in the SOT-416/SC-90 package, measuring 8.55 to 8.75 mm in length, 3.80 to 4.00 mm in width, and 1.35 to 1.75 mm in height. Maximum ratings include a collector-base voltage of 50 Vdc, collector-emitter voltage of 50 Vdc, and collector current of 100 mAdc. Power dissipation is 125 mW at 25°C, with an operating and storage temperature range of -55 to +150°C. Input resistance is specified between 7.0 and 13 kOhms, and DC current gain ranges from 100 to 600 at IC = 1.0 mA and VCE = 5 Vdc. The device is available in 7-inch/3000-unit tape and reel packaging (T1 suffix).