Rochester Electronics Memory DS1350WP-150

Description
IC NVSRAM 4MBIT PAR 34PWRCAP
Description
IC NVSRAM 4MBIT PAR 34PWRCAP
Datasheet
Datasheet Summary
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The DS1350WP-150 is a nonvolatile SRAM memory device with a capacity of 1,048,576 bits, organized as 131,072 words by 8 bits. It features a built-in lithium energy source that ensures data retention for a minimum of 10 years without external power. The device automatically protects data during power loss and includes a power supply monitor that resets the processor when voltage drops below a certain threshold. It also has a battery monitor that checks the remaining capacity daily. This memory operates at a supply voltage of 3.3V and offers read and write access times of 100 ns, with unlimited write cycle endurance. The typical standby current is 50 ¬µA. The DS1350WP-150 is designed for surface mounting and is compatible with a replaceable PowerCap module, which provides the lithium backup battery. It is available in an industrial temperature range of -40¬8C to +85¬8C, making it suitable for a variety of applications. The device is a potential upgrade for existing SRAM, EEPROM, or Flash components.

Datasheet Summary
Powered by GS/AI

The DS1350WP-150 is a nonvolatile SRAM memory device with a capacity of 1,048,576 bits, organized as 131,072 words by 8 bits. It features a built-in lithium energy source that ensures data retention for a minimum of 10 years without external power. The device automatically protects data during power loss and includes a power supply monitor that resets the processor when voltage drops below a certain threshold. It also has a battery monitor that checks the remaining capacity daily. This memory operates at a supply voltage of 3.3V and offers read and write access times of 100 ns, with unlimited write cycle endurance. The typical standby current is 50 ¬µA. The DS1350WP-150 is designed for surface mounting and is compatible with a replaceable PowerCap module, which provides the lithium backup battery. It is available in an industrial temperature range of -40¬8C to +85¬8C, making it suitable for a variety of applications. The device is a potential upgrade for existing SRAM, EEPROM, or Flash components.

Suppliers

Company
Product
Description
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IC NVSRAM 4MBIT PAR 34PWRCAP

IC NVSRAM 4MBIT PAR 34PWRCAP

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number DS1350WP-150
Product Name Memory
Memory Category NVSRAM; SRAM Chip
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