Rochester Electronics Memory DS1350WP-150

Description
IC NVSRAM 4MBIT PAR 34PWRCAP
Description
IC NVSRAM 4MBIT PAR 34PWRCAP
Datasheet
Datasheet Summary
Powered by GS/AI

The DS1350WP-150 is a nonvolatile SRAM memory device with a capacity of 1,048,576 bits, organized as 131,072 words by 8 bits. It features a built-in lithium energy source that ensures data retention for a minimum of 10 years without external power. The device automatically protects data during power loss and includes a power supply monitor that resets the processor when voltage drops below a certain threshold. It also has a battery monitor that checks the remaining capacity daily. This memory operates at a supply voltage of 3.3V and offers read and write access times of 100 ns, with unlimited write cycle endurance. The typical standby current is 50 ¬µA. The DS1350WP-150 is designed for surface mounting and is compatible with a replaceable PowerCap module, which provides the lithium backup battery. It is available in an industrial temperature range of -40¬8C to +85¬8C, making it suitable for a variety of applications. The device is a potential upgrade for existing SRAM, EEPROM, or Flash components.

Datasheet Summary
Powered by GS/AI

The DS1350WP-150 is a nonvolatile SRAM memory device with a capacity of 1,048,576 bits, organized as 131,072 words by 8 bits. It features a built-in lithium energy source that ensures data retention for a minimum of 10 years without external power. The device automatically protects data during power loss and includes a power supply monitor that resets the processor when voltage drops below a certain threshold. It also has a battery monitor that checks the remaining capacity daily. This memory operates at a supply voltage of 3.3V and offers read and write access times of 100 ns, with unlimited write cycle endurance. The typical standby current is 50 ¬µA. The DS1350WP-150 is designed for surface mounting and is compatible with a replaceable PowerCap module, which provides the lithium backup battery. It is available in an industrial temperature range of -40¬8C to +85¬8C, making it suitable for a variety of applications. The device is a potential upgrade for existing SRAM, EEPROM, or Flash components.

Suppliers

Company
Product
Description
Supplier Links
IC NVSRAM 4MBIT PAR 34PWRCAP

IC NVSRAM 4MBIT PAR 34PWRCAP

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number DS1350WP-150
Product Name Memory
Memory Category NVSRAM; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 10415FC10 - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category SRAM; SRAM Chip
Access Time 10 ns
Density 1 kbits
View Details
2 suppliers
Memory - 40060212 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - SMJ27C512 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EPROM; UVEPROM
Access Time 15 to 25 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882548 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 512 k
Bits per Word 8 bits
View Details