Rochester Electronics Memory DS1250YL-70-IND

Description
IC NVSRAM 4MBIT PARALLEL 34LPM
  • Memory - DS1250YL-70-IND - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
IC NVSRAM 4MBIT PARALLEL 34LPM
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - DS1250YL-70-IND - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
DS1250YL-70-IND
Memory DS1250YL-70-IND
IC NVSRAM 4MBIT PARALLEL 34LPM

IC NVSRAM 4MBIT PARALLEL 34LPM

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number DS1250YL-70-IND
Product Name Memory
Memory Category NVSRAM; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 6116LA25SOG - Lingto Electronic Limited
Rochester Electronics
Memory
6116LA25SOG
Specs
Memory Category SRAM; SRAM Chip
Access Time 25 ns
Density 16 kbits
View Details
Flash Memory - 1882547 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882547
Specs
Memory Category Flash
Number of Words 256 k
Bits per Word 8 bits
View Details
Memory - AS5C4009LL - Micross Components, Inc.
Micross Components, Inc.
Memory
AS5C4009LL
Specs
Memory Category SRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096 kbits
View Details
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821503VXF - 5962R1821503VXF - Infineon Technologies AG
Infineon Technologies AG
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821503VXF
5962R1821503VXF
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 144000 kbits
Number of Words 2 k
View Details