Rochester Electronics Memory DS1230Y-200IND

Description
IC NVSRAM 256KBIT PAR 28EDIP
  • Memory - DS1230Y-200IND - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
IC NVSRAM 256KBIT PAR 28EDIP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - DS1230Y-200IND - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
DS1230Y-200IND
Memory DS1230Y-200IND
IC NVSRAM 256KBIT PAR 28EDIP

IC NVSRAM 256KBIT PAR 28EDIP

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number DS1230Y-200IND
Product Name Memory
Memory Category NVSRAM; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS5C2568 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS5C2568
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 2935936 - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
2935936
View Details
Logic - Logic - FIFOs Memory - SN74ACT7801-18FN - 1253360-SN74ACT7801-18FN - Win Source Electronics
Texas Instruments
Logic - Logic - FIFOs Memory - SN74ACT7801-18FN
SN74ACT7801-18FN
View Details
SDRAM - 2420773 - RS Components, Ltd.
RS Components, Ltd.
SDRAM
2420773
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details