Rochester Electronics Memory DS1230AB-70IND

Description
IC NVSRAM 256KBIT PAR 28EDIP
  • Memory - DS1230AB-70IND - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
IC NVSRAM 256KBIT PAR 28EDIP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - DS1230AB-70IND - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
DS1230AB-70IND
Memory DS1230AB-70IND
IC NVSRAM 256KBIT PAR 28EDIP

IC NVSRAM 256KBIT PAR 28EDIP

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number DS1230AB-70IND
Product Name Memory
Memory Category NVSRAM; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 3247P0590 - Lingto Electronic Limited
Rochester Electronics
Memory
3247P0590
View Details
Memory - AS4C1024 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS4C1024
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - Memory - Controllers - BQ2201SN-NTRG4 - 1154083-BQ2201SN-NTRG4 - Win Source Electronics
Texas Instruments
Memory - Memory - Controllers - BQ2201SN-NTRG4
BQ2201SN-NTRG4
Specs
Memory Category SRAM Chip
View Details
SDRAM - 1882632P - RS Components, Ltd.
RS Components, Ltd.
SDRAM
1882632P
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 2048000 kbits
View Details