Rochester Electronics Memory CYD18S72V-100BBI

Description
SRAM - Dual Port, Asynchronous, Standard Memory IC 18Mbit Parallel 100 MHz 5.2 ns 484-FBGA (23x23)
Description
SRAM - Dual Port, Asynchronous, Standard Memory IC 18Mbit Parallel 100 MHz 5.2 ns 484-FBGA (23x23)

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Product
Description
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Memory - CYD18S72V-100BBI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Asynchronous, Standard Memory IC 18Mbit Parallel 100 MHz 5.2 ns 484-FBGA (23x23)

SRAM - Dual Port, Asynchronous, Standard Memory IC 18Mbit Parallel 100 MHz 5.2 ns 484-FBGA (23x23)

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Integrated Circuits (ICs) - Memory - CYD18S72V-100BBI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
CYD18S72V-100BBI
Integrated Circuits (ICs) - Memory CYD18S72V-100BBI
CYD18S72 - FLEX72 3.3V 256K X 72

CYD18S72 - FLEX72 3.3V 256K X 72

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Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number CYD18S72V-100BBI CYD18S72V-100BBI
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 5.2 ns 5.2 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 18000 kbits 18000 kbits
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