Rochester Electronics Memory CYD18S18V18-167BBAXC

Description
DUAL-PORT SRAM, 1MX18, 4NS PBGA2
Datasheet
Description
DUAL-PORT SRAM, 1MX18, 4NS PBGA2
Datasheet

Suppliers

Company
Product
Description
Supplier Links
DUAL-PORT SRAM, 1MX18, 4NS PBGA2

DUAL-PORT SRAM, 1MX18, 4NS PBGA2

Supplier's Site Datasheet
Memory - CYD18S18V18-167BBAXC - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Asynchronous, Standard Memory IC 18Mbit Parallel 167 MHz 4 ns 256-FBGA (17x17)

SRAM - Dual Port, Asynchronous, Standard Memory IC 18Mbit Parallel 167 MHz 4 ns 256-FBGA (17x17)

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number CYD18S18V18-167BBAXC CYD18S18V18-167BBAXC
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 4 ns 4 ns
Density 18000 kbits 18000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882560 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Controllers - BQ2205LYPWG4 - Quarktwin Technology Ltd.
Specs
Operating Temperature -20 to 70 C (-4 to 158 F)
Package Type SSOP; TSSOP; 16-TSSOP (0.173\", 4.40mm Width)
Supply Voltage 3.6V; 3V ~ 3.6V
View Details
Memory - 448-CY14B256LA-SZ25XITTR-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; "32-SOIC (0.295"", 7.50mm Width)"
View Details
5 suppliers
Memory - AS8E128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details