Rochester Electronics Memory CY7C1523JV18-300BZXC

Description
DDR SRAM, 4MX18, 0.45NS, CMOS, P
  • Memory - CY7C1523JV18-300BZXC - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
DDR SRAM, 4MX18, 0.45NS, CMOS, P
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CY7C1523JV18-300BZXC - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
CY7C1523JV18-300BZXC
Memory CY7C1523JV18-300BZXC
DDR SRAM, 4MX18, 0.45NS, CMOS, P

DDR SRAM, 4MX18, 0.45NS, CMOS, P

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number CY7C1523JV18-300BZXC
Product Name Memory
Unlock Full Specs
to access all available technical data

Similar Products

- PC16550DV/NOPB - Rochester Electronics
Texas Instruments
PC16550DV/NOPB
Specs
Memory Category FIFO
Package Type PLCC; PLCC44
View Details
Memory - 5962-8869002LA - Lingto Electronic Limited
Rochester Electronics
Memory
5962-8869002LA
Specs
Memory Category PROM; PROM
Access Time 120 ns
Density 4 kbits
View Details
Infineon Technologies AG
Integrated Circuits (ICs) - Memory - Memory
40060304
View Details
Memory - MT4C4001J - Micross Components, Inc.
Micross Components, Inc.
Memory
MT4C4001J
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details