Rochester Electronics Memory CY7C1426JV18-300BZC

Description
IC SRAM 36MBIT PARALLEL 165FBGA
  • Memory - CY7C1426JV18-300BZC - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
IC SRAM 36MBIT PARALLEL 165FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CY7C1426JV18-300BZC - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
CY7C1426JV18-300BZC
Memory CY7C1426JV18-300BZC
IC SRAM 36MBIT PARALLEL 165FBGA

IC SRAM 36MBIT PARALLEL 165FBGA

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number CY7C1426JV18-300BZC
Product Name Memory
Memory Category SRAM; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYX4DDR3L128M16JTBG - Micross Components, Inc.
Micross Components, Inc.
Memory
MYX4DDR3L128M16JTBG
Specs
Memory Category DDR3
Access Time 1.25 ns
Operating Temperature -40 to 95 C (-40 to 203 F)
View Details
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F1120202VXA - 5962F1120202VXA - Infineon Technologies AG
Infineon Technologies AG
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F1120202VXA
5962F1120202VXA
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 72000 kbits
Number of Words 4 k
View Details
Memory - Memory - Controllers - BQ2205LYPW - 1154092-BQ2205LYPW - Win Source Electronics
Texas Instruments
Memory - Memory - Controllers - BQ2205LYPW
BQ2205LYPW
View Details
3 suppliers
SDRAM - 2420772 - RS Components, Ltd.
RS Components, Ltd.
SDRAM
2420772
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details